ROHS 정책 책임자 유럽위원회 DG 환경 단위 ENV/A2 - 폐기물 관리 및 재활용 Avenue de Beaulieu (BU) 9 -5/1-6 B-116- 브뤼셀 벨기에
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6(a)
6(a)
Lead as an alloying element in steel for machining purposes and in galvanised steel containing up to 0,35 % lead by weight
6(a)-I
6(a)-I
Lead as an alloying element in steel for machining purposes containing up to 0,35% lead by weight*
6(a)-II
6(a)-II
Lead as an alloying element in batch hot-dip galvanised steel components containing up to 0,2% lead by weight*
6(b)
6(b)
Lead as an alloying element in aluminium containing up to 0,4% lead by weight
6(b)-I
6(b)-I
Lead as an alloying element in aluminium containing up to 0,4% lead by weight, provided it stems from lead-bearing aluminium scrap recycling*
6(b)-II
6(b)-II
Lead as an alloying element in aluminium for machining purposes with a lead content up to 0,4% by weight*
6(b)-III
6(b)-III
Lead as an alloying element in aluminium casting alloys containing up to 0,3% lead by weight provided
7(a)
7(a)
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead)
7(a)-I
7(a)-I
for internal interconnections for attaching die, or other components along with a die in semiconductor assembly with steady state or transient/impulse currents of 0.1 A or greater or blocking voltages beyond 10 V, or die edge sizes larger than 0.3 mm x 0.3 mm
7(a)-II
7(a)-II
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead) for integral (meaning internal and external) connections of die attach in electrical and electronic components, if all the following conditions are met:
the thermal conductivity of the cured/sintered die-attach material is >35W/(m*K),
the electrical conductivity of the cured/sintered die-attach material is >4.7MS/m,
solidus melting temperature is higher than 260°C
7(a)-III
7(a)-III
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead)
in first level solder joints (internal or integral connections - meaning internal and external) for manufacturing components so that subsequent mounting of electronic components onto subassemblies (i.e. modules, sub-circuit boards, substrates, or point-to-point soldering) with a secondary solder does not reflow the first level solder. This sub-entry excludes die attach applications and hermetic sealings
7(a)-IV
7(a)-IV
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead) in second level solder joints for the attachment of components to printed circuit board or lead frames:
in solder balls for the attachment of ceramic ball-grid-array (BGA)
in high temperature plastic overmouldings (> 220 °C)
7(a)-V
7(a)-V
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead) as a hermetic sealing material between:
a ceramic package or plug and a metal case,
component terminations and an internal sub-part
7(a)-VI
7(a)-VI
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead) for establishing electrical connections between lamp components in incandescent reflector lamps for infrared heating, high intensity discharge lamps, or oven lamps
7(a)-VII
7(a)-VII
Lead in high melting temperature type solders (i.e., lead-based alloys containing 85% by weight or more lead) for audio transducers where the peak operating temperature exceeds 200°C.
7(c)-I
7(c)-I
Electrical and electronic components containing lead in a glass or ceramic other than dielectric ceramic in capacitors, e.g. piezoelectronic devices, or in a glass or ceramic matrix compound.
7(c)-II
7(c)-II
Lead in dielectric ceramic in capacitors for a rated voltage of 125 V AC or 250 V DC or higher excluding applications covered by point 7(c)-I or 7(c)-IV.
7(c)-V
7(c)-V
Electrical and electronic components containing lead in a glass or glass matrix compound that fulfils any of the following functions:
for protection and electrical insulation in glass beads of high-voltage diodes and glass layers for wafers on the basis of a lead-zinc-borate or a lead-silica-borate glass body;
for hermetic sealing between ceramic, metal and/or glass parts;
for bonding purposes in a process parameter window for < 500 °C combined with a viscosity of 1013.3 dPas (‘glass-transition temperature’);
for use as a resistive material such as ink, with a resistivity range from 1 ohm/square to 1 megohm/square, excluding trimmer potentiometers;
for use in chemically modified glass surfaces for microchannel plates (MCPs), channel electron multipliers (CEMs) and resistive glass products (RGPs). Applies to all categories and expires on 31 December 2027.
7(c)-VI
7(c)-VI
Electrical and electronic components containing lead in a ceramic that fulfils any of the following functions (excluding items covered by points 7(c)-II, 7(c)-III and 7(c)-IV of this Annex as well as point 14 of Annex IV):
for use in piezoelectric lead zirconium titanate (PZT) ceramics;
for providing ceramics with a positive temperature coefficient (PTC).
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